内容标题20

  • <tr id='5tu8bx'><strong id='5tu8bx'></strong><small id='5tu8bx'></small><button id='5tu8bx'></button><li id='5tu8bx'><noscript id='5tu8bx'><big id='5tu8bx'></big><dt id='5tu8bx'></dt></noscript></li></tr><ol id='5tu8bx'><option id='5tu8bx'><table id='5tu8bx'><blockquote id='5tu8bx'><tbody id='5tu8bx'></tbody></blockquote></table></option></ol><u id='5tu8bx'></u><kbd id='5tu8bx'><kbd id='5tu8bx'></kbd></kbd>

    <code id='5tu8bx'><strong id='5tu8bx'></strong></code>

    <fieldset id='5tu8bx'></fieldset>
          <span id='5tu8bx'></span>

              <ins id='5tu8bx'></ins>
              <acronym id='5tu8bx'><em id='5tu8bx'></em><td id='5tu8bx'><div id='5tu8bx'></div></td></acronym><address id='5tu8bx'><big id='5tu8bx'><big id='5tu8bx'></big><legend id='5tu8bx'></legend></big></address>

              <i id='5tu8bx'><div id='5tu8bx'><ins id='5tu8bx'></ins></div></i>
              <i id='5tu8bx'></i>
            1. <dl id='5tu8bx'></dl>
              1. <blockquote id='5tu8bx'><q id='5tu8bx'><noscript id='5tu8bx'></noscript><dt id='5tu8bx'></dt></q></blockquote><noframes id='5tu8bx'><i id='5tu8bx'></i>
                X

                关注微信公众号了解更多信息

                点击屏幕其他地方⊙可关闭此窗口

                2英寸氮化镓Template

                产品概述

                2英寸氮化镓Template

                GaN/ Al2O3 Substrates (2")

                产品型号

                Item

                ST-ncY-Φ50

                ST-ncZ-Φ50

                ST-ncH-Φ50

                尺寸

                Size (mm)

                Φ50.8±0.5 (2")

                衬底结构

                Substrate Structure

                GaN on Sapphire(0001)

                (Standard: SSP Option: DSP)

                厚度

                Thickness (μm)

                4.5±0.5; 20±2;

                Customized

                导电类型

                Conduction Type

                Un-doped N-type

                N-type

                High-doped N-type

                电阻率 (300K)

                Resistivity (Ω·cm

                ≤0.5

                ≤0.05

                ≤0.01

                GaN厚度不均匀〓性

                GaN Thickness Uniformity

                ≤±5% (2")

                错位密度

                Dislocation Density (cm-2)

                ≤5×108

                有效面积Useable Surface Area

                90%

                包装

                Package

                Packaged in a class 100 clean room environment.

                2英寸氮化镓Template(图1)

                Copyright ? 2018 东莞市中镓半导体科技有限公司 All Rights Reserved. ICP备案号:粤ICP备12004059号